Product Parameter
- Series
- -
- Packaging
- Tube
- Part Status
- Active
- Power - Max
- 650mW
- Mounting Type
- Through Hole
- Package / Case
- 14-DIP (0.300", 7.62mm)
- Transistor Type
- 4 NPN (Quad)
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Frequency - Transition
- 200MHz
- Supplier Device Package
- TO-116
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 50mA, 500mA
- Current - Collector (Ic) (Max)
- 500mA
- Current - Collector Cutoff (Max)
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 150mA, 10V
- Voltage - Collector Emitter Breakdown (Max)
- 40V